| 1. |
- Baveja, P. P., et al.
(författare)
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Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276
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Konferensbidrag (refereegranskat)abstract
- We present an empirical thermal model for VCSELs based on extraction of temperature dependence of macroscopic VCSEL parameters from CW measurements. We apply our model to two, oxide-confined, 850-nm VCSELs, fabricated with a 9-mu m inner-aperture diameter and optimized for high-speed operation. We demonstrate that for both these devices, the power dissipation due to linear heat sources dominates the total self-heating. We further show that reducing photon lifetime down to 2 ps drastically reduces absorption heating and improves device static performance by delaying the onset of thermal rollover. The new thermal model can identify the mechanisms limiting the thermal performance and help in formulating the design strategies to ameliorate them.
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| 2. |
- Davani, Hooman A., et al.
(författare)
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Polarization investigation of a tunable high-speed short-wavelength bulk-micromachined MEMS-VCSEL
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Art. no. 82760T-
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Konferensbidrag (refereegranskat)abstract
- We report the investigation of the state of polarization (SOP) of a tunable vertical-cavity surface-emitting laser (VCSEL) operating near 850 nm with a mode-hop free single-mode tuning range of about 12 nm and an amplitude modulation bandwidth of about 5 GHz. In addition, the effect of a sub-wavelength grating on the device and its influence on the polarization stability and polarization switching has been investigated. The VCSEL with an integrated sub-wavelength grating shows a stable SOP with a polarization mode suppression ratio (PMSR) more than 35 dB during the tuning.
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| 3. |
- Gierl, Christian, et al.
(författare)
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Tuneable VCSEL aiming for the application in interconnects and short haul systems
- 2011
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819484963 ; 7959
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Widely tunable vertical cavity surface emitting lasers (VCSEL) are of high interest for optical communications, gas spectroscopy and fiber-Bragg-grating measurements. In this paper we present tunable VCSEL operating at wavelength around 850 nm and 1550 nm with tuning ranges up to 20 nm and 76 nm respectively. The first versions of VCSEL operating at 1550 nm with 76 nm tuning range and an output power of 1.3mW were not designed for high speed modulation, but for applications where only stable continious tuning is essential (e.g. gas sensing). The next step was the design of non tunable VCSEL showing high speed modulation frequencies of 10 GHz with side mode supression ratios beyond 50 dB. The latest version of these devices show record output powers of 6.7mW at 20 °C and 3mW at 80 °C. The emphasis of our present and future work lies on the combination of both technologies. The tunable VCSEL operating in the 850 nm-region reaches a modulation bandwidth of 5.5GHz with an output power of 0.8mW.
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| 4. |
- Gustavsson, Johan, 1974, et al.
(författare)
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High-speed 850-nm VCSELs for 40 Gb/s transmission
- 2010
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We have explored the possibility to extend the data transmission rate for standard 850-nm GaAs-based VCSELs beyond the 10 Gbit/s limit of today's commercially available directly-modulated devices. By sophisticated tailoring of the design for high-speed performance we demonstrate that 10 Gb/s is far from the upper limit. For example, the thermal conductivity of the bottom mirror is improved by the use of binary compounds, and the electrical parasitics are kept at a minimum by incorporating a large diameter double layered oxide aperture in the design. We also show that the intrinsic high speed performance is significantly improved by replacing the traditional GaAs QWs with strained InGaAs QWs in the active region. The best overall performance is achieved for a device with a 9 μm diameter oxide aperture, having in a threshold current of 0.6 mA, a maximum output power of 9 mW, a thermal resistance of 1.9 °C/mW, and a differential resistance of 80 Ω. The measured 3dB bandwidth exceeds 20 GHz, and we experimentally demonstrate that the device is capable of error-free transmission (BER
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| 5. |
- Gustavsson, Johan, 1974, et al.
(författare)
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High speed 850nm VCSELs for >40Gb/s transmission
- 2013
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Ingår i: 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2013. - 9781479904570 ; , s. OTh4H.4-
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Konferensbidrag (refereegranskat)abstract
- VCSELs capable of direct modulation exceeding 40Gb/s are needed in next generation optical interconnect standards. Using a refined high-speed design we demonstrate GaAs-based VCSELs having record-high 28GHz modulation bandwidth, and that operate error-free at 47Gb/s.
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| 6. |
- Gustavsson, Johan, 1974, et al.
(författare)
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High-speed, high-temperature VCSELs for optical interconnects
- 2013
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Ingår i: 2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013. - 9781467350600 ; , s. 7-8
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Konferensbidrag (refereegranskat)abstract
- Directly modulated VCSELs operating at 40Gb/s are required for next generation optical interconnect standards. Using a refined high-speed design we demonstrate GaAs-based VCSELs that operate error-free at 47Gb/s at 25°C, and 40Gb/s at 85°C.
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| 7. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Optimized active region design for high speed 850 nm VCSELs
- 2009
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Ingår i: CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference; Munich; Germany; 14 June 2009 through 19 June 2009. - 9781424440801 ; , s. Art. no. 5192928-
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Konferensbidrag (refereegranskat)abstract
- Short wavelength (850 nm) VCSELs operating at speeds of 25 Gb/s and above are needed for future highcapacity, short reach data communication links. The modulation bandwidth is intrinsically limited by thedifferential gain of the QWs used in the active region of the VCSEL. In this work we explore the use of strainedInGaAs/AlGaAs QWs and benchmark the performance against conventional GaAs/AlGaAs QWs.An 8-band k⋅p model [1] was used to calculate the energy band dispersions, using band offsets from modelsolid theory [2]. In all cases, the QW and barrier compositions and QW thickness were chosen for a gain peak at845 nm, enabling emission at 850 nm with a small detuning between the gain peak and the cavity resonance.With increasing In-concentration the QW thickness is reduced and the Al-concentration in the barrier isincreased to maintain the gain peak at 845 nm and the number of QWs is increased to maintain opticalconfinement and enable operation at a low carrier density for high differential gain. It was found that theincorporation of up to 10% In leads to a significant reduction in threshold carrier density and increase indifferential gain. This is due to an increased separation and reduced mixing between the highest heavy-hole andlight-hole valence bands (Fig.1). A further increase of In concentration leads to a less marked improvement.With an optimum active region design (5 x 4 nm In0.10Ga0.90As/Al0.37Ga0.63As QWs) a differential gain twice ashigh as that of a conventional design with 3 x 8 nm GaAs/Al0.30Ga0.70As QWs was predicted (Table 1).The improvement of differential gain was experimentally confirmed by extracting the resonance frequencyand its dependence on current from the modulation response of VCSELs with optimized InGaAs/AlGaAs QWand conventional GaAs/AlGaAs QW active regions. The differential gain was calculated from the correspondingD-factors (Fig.2) [3]. Excellent agreement was obtained between theory and experiments (Table 1).VCSELs with an optimized InGaAs/AlGaAs QW active region have a modulation bandwidth of 20 GHz at25° and 15 GHz at 85°C [4] and have enabled error-free transmission over 50 (100) m multimode fiber up to 32(25) Gb/s at a bias current density as low as 11 kA/cm2 under direct current modulation.
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| 8. |
- Haglund, Erik, 1985, et al.
(författare)
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850 nm datacom VCSELs for higher-speed and longer-reach transmission
- 2013
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Ingår i: European VCSEL Day 2013.
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Konferensbidrag (refereegranskat)abstract
- The 850 nm GaAs-based VCSEL is already the dominating technology for transmitters in optical interconnects up to 100 m in datacenters, thanks to low-cost fabrication, excellent high-speed properties at low currents and the existence of high-speed OM4 multimode fiber optimized for this particular wavelength. Future datacenters will require faster and more energy-efficient VCSELs to increase the overall bandwidth and reduce the power consumption of the datacenter network. In addition, longer-reach interconnects exceeding 1 km will also be required as datacenters grow into large multi-building complexes.By optimizing the doping profiles of the DBRs to reduce resistance, using a short (½-λ) cavity to improve longitudinal optical confinement and optimizing the photon lifetime for optimal damping, we obtained a record-high small-signal modulation bandwidth of 28 GHz for a ~4 µm oxide aperture VCSEL. A 7 µm oxide aperture VCSEL (~27 GHz bandwidth) enabled error-free transmission (bit-error-rate 300 m), the large spectral width of VCSELs leads to severe signal degradation by fiber dispersion. We have investigated two methods of fabricating low-spectral width quasi-single mode VCSELs to mitigate this problem. By using a small oxide aperture of ~3 µm, error-free transmission was achieved at 22 Gbit/s over 1.1 km of OM4 fiber. An alternative approach is to use an integrated mode filter in the form of a shallow surface relief to reduce the spectral width of the VCSEL. The mode filter allows for the use of a larger oxide aperture and thereby enables a lower resistance and operation at a lower current density. A 5 µm oxide aperture VCSEL with a mode filter enabled error-free transmission at 25 Gbit/s over 500 m of OM4 fiber.
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| 9. |
- Haglund, Erik, 1985, et al.
(författare)
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GaAs High-Contrast Gratings with InGaP Sacrificial Layer for Multi-Wavelength VCSEL Arrays
- 2016
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Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; TuD2, s. Article n0 7765746-
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Konferensbidrag (refereegranskat)abstract
- We report on highly reflective suspended GaAs high-contrast gratings (HCGs) using an InGaP sacrificial layer. A high reflectivity approaching 100% was observed both in direct reflectivity measurement and by low threshold currents in fabricated multi-wavelength HCG-VCSEL arrays.
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| 10. |
- Haglund, Erik, 1985, et al.
(författare)
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High-contrast gratings for WDM VCSEL arrays
- 2014
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Ingår i: Optics & Photonics in Sweden, 11-12 Nov. 2014, Göteborg.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Vertical-cavity surface-emitting lasers (VCSELs) have become the workhorse of short-reach optical interconnects in datacenters and supercomputers. The last few years have seen an impressive increase in VCSEL modulation bandwidth, enabling record-high single-channel data rates exceeding 60 Gbit/s [1]. In addition to higher single-channel rates, interconnect capacity may be enhanced by employing multiplexing techniques such coarse wavelength division multiplexing (WDM). WDM VCSEL arrays can be designed using a high-contrast grating (HCG) as top mirror instead of a distributed Bragg reflector (DBR) [2]. The HCG consists of a subwavelength grating of high refractive index material (GaAs) surrounded by low refractive index material (air), see figure 1. The result is a thin, broad-band and highly reflective mirror. The reflection from the HCG has a varying phase depending on grating geometry. This can be used to set the HCG-VCSEL wavelength in a post-growth process by fabricating gratings with different period and duty-cycle. A first proof of concept has been realized and HCG-VCSELs showing resonances covering a span exceeding 20 nm have been demonstrated. Figure 1: Top: schematic figure of HCG-VCSEL array. Left: Top and cross-sectional SEM image of HCG. Right: Simulated and experimental HCG-VCSEL resonance wavelength for different duty cycles and periods (p) measured by electroluminescence. References[1] D. Kuchta et al., “64Gb/s Transmission over 57m MMF using an NRZ Modulated 850nm VCSEL,” OFC 2014[2] V. Karagodsky et al., “Monolithically integrated multi-wavelength VCSEL arrays using high-contrast gratings,” Opt. Express, 18(2), 2010
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